Prozesstechnologie für GaN-basierende Leuchtdioden (English shop)

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This dissertation investigates the development and optimization of fabrication processes for gallium nitride-based light-emitting diodes (GaN LEDs) within the AlGaInN material system. The research focuses on magnesium acceptor activation, semiconductor structuring through ion beam etching, and the fabrication of low-resistance electrical contacts. Different thermal activation processes are compared regarding their effects on hole concentration and thermal stress in the semiconductor material. Gallium nitride structuring is examined using ion beam etching (IBE), reactive ion beam etching (RIBE), and chemically assisted ion beam etching (CAIBE). Particular attention is given to optimizing metallization systems for p-type and n-type GaN, including Ti/Al/Ni/Au and Ni/Au contact structures. The developed techniques are combined into a complete fabrication process and evaluated according to their electrical and optical characteristics. The fabricated LEDs achieve an emission wavelength of 465 nm and an optical output power of 0.84 mW at 20 mA. The findings demonstrate how coordinated optimization of dopant activation, etching technology, and contact metallization can enhance the performance of GaN-based LEDs.