Dreidimensionale Systemintegration:Technologische Entwicklung und Anwendung (English shop)

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The development of integrated circuits (“ICs”), whether microprocessors or application-specific circuits, has led to increased interconnect lengths as functional density rises. In order to meet the increased requirements in this respect, the lateral geometries of the conductor tracks would in principle have to be reduced. To maintain a consistently low resistance, however, the aspect ratio of the metallizations must increase at the same time, which results in higher demands on the manufacturing technology.

One remedy for this can be provided, for example, by a three-dimensional integration technology. This offers the possibility of stacking circuits and sensors on top of one another and providing them with electrical interconnections. In contrast to interconnections in conventional two-dimensional systems, these connections have the advantage of being shorter and therefore subject to fewer losses.
In addition, the 3D arrangement offers advantages with regard to the footprint of such systems and the ease with which modules based on different material systems can be combined.

This work describes the development of a silicon-based 3D integration technology. Important properties of such a system are characterized and an extension of the technology to other material systems is demonstrated using the example of a diamond-based UV sensor as an application.