3-dimensionale GaN-Nanostrukturen - Grundlagen neuartiger Leuchtdioden - (English shop)

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The efficient generation of light is becoming increasingly important. Not only does great potential remain in general lighting; the battery runtimes of mobile devices such as notebooks or mobile phones can also be improved by highly efficient backlighting. In recent years, light-emitting diodes based on the AlInGaN material system have developed into a key technology in these sectors. The efficiency of modern light-emitting diodes is already excellent, and it is becoming increasingly difficult to raise it further.

A very promising approach to bringing this technology closer to the theoretically achievable limits is the transition from a two-dimensional layer structure to three-dimensional NanoLEDs. This technologically demanding step promises advantages such as an enlarged active area, improved indium incorporation and the emission of different wavelengths within a single LED chip for the generation of white light without the need for phosphor conversion.

Although the past 10 years of intensive research in the field of semiconductor nanorods have demonstrated technological advances in growth methods and chip processes, these have without exception been tailored to special laboratory conditions and could not be used for product applications.