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Analysis and Optimization of AlGaN/GaN High Electron Mobility Transistors for Microwave Applications

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Analysis and Optimization of AlGaN/GaN High Electron Mobility Transistors for Microwave Applications (English shop)

Michael Hosch (Author)

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This thesis deals with the analysis and optimization of some of the most prominent non-ideal effects in AlGaN/GaN high electron mobility transistors used in microwave applications as well as the optimization of the RF gain. The effect of current collapse, the root cause of leakage currents as well as field-dependent self-heating effects have been investigated by eletrical characterization using well established techniques and have been analyzed using 2-dimensional physical device simulations. It will be shown that the origin of all effects is strongly related to the device surface and some are even competing effects making device optimization a challenge. However, a detailed localization of the regions affecting device performance will be given leading to a better understanding for fabrication process optimization. Finally, I simulation study is conducted giving suggestions for RF gain improvement based on very simple device layout variations.

ISBN-13 (Printausgabe) 386955844X
ISBN-13 (Hard Copy) 9783869558448
ISBN-13 (eBook) 9783736938441
Language English
Page Number 129
Lamination of Cover glossy
Edition 1 Aufl.
Volume 0
Publication Place Göttingen
Place of Dissertation Universität Ulm
Publication Date 2011-08-08
General Categorization Dissertation
Departments Electrical engineering
Keywords Gallium Nitrid, HEMT, Simulation