Untersuchung und Optimierung robuster und hochlinearer rauscharmer Verstärker in GaN-Technologie (Volume 45) (English shop)

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The next generation of integrated transmit and receive systems requires both robust low-noise amplifiers and power amplifiers on a single chip. Thanks to its high breakdown voltages, high electron mobility and low noise figure, GaN HEMT technology is well suited to the realisation of such systems.

This work investigates and optimises highly linear and robust low-noise amplifiers that can be integrated into transceiver systems. The GaN HEMTs are characterised with regard to minimising the noise figure and are subjected to high overload at the input in order to analyse their properties in the nonlinear regime.

In addition to the development and characterisation of the robust low-noise amplifiers, a new concept was developed, measured and characterised by means of which the robustness can be increased further. The concept employs a novel interconnection of two transistors at the amplifier input, which increases the voltage withstand capability against high power levels. This made it possible to demonstrate peak values of +44 dBm under CW excitation and +47 dBm under pulsed excitation at the amplifier input without damage.