Cookies help us deliver our services. By using our services, you agree to our use of cookies.

Cuvillier Verlag

Publications, Dissertations, Habilitations & Brochures.
International Specialist Publishing House for Science and Economy

Cuvillier Verlag

De En Es
GaN HEMT Modeling Including Trapping Effects Based on Chalmers Model and Pulsed S-Parameter Measurements

Hard Copy
EUR 48.00

EUR 33.60

GaN HEMT Modeling Including Trapping Effects Based on Chalmers Model and Pulsed S-Parameter Measurements (Volume 46) (English shop)

Peng Luo (Author)


Extract, PDF (610 KB)
Table of Contents, PDF (520 KB)

ISBN-13 (Hard Copy) 9783736999060
ISBN-13 (eBook) 9783736989061
Language English
Page Number 160
Edition 1.
Book Series Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik
Volume 46
Publication Place Göttingen
Place of Dissertation BTU Cottbus
Publication Date 2019-01-09
General Categorization Dissertation
Departments Electrical engineering
Keywords Large-Signal Model Types,GaN Hemt,Outline of the Thesis,A1GAN/GaN,Ham,Extrinsic,Parameter,Extraction,Nonlinear,Circuit,Modeling,Capacitances,Large-signal,Physical,Mechanism,Trapping Effects,Gate-Lag,Drain-Lag,Published Models,Pulsed Measurements,Device,Self-Heating,Reduction,Traps Isolation,Intrinsic,Verification, Load Pull Performance,Model Limitations,Output,Conductance Match,Abbreviations,

GaN HEMTs are regarded as one of the most promising RF power transistor technologies thanks to their high-voltage high-speed characteristics. However, they are still known to be prone to trapping effects, which hamper achievable output power and linearity. Hence, accurately and efficiently modeling the trapping effects is crucial in nonlinear large-signal modeling for GaN HEMTs.
This work proposes a trap model based on Chalmers model, an industry standard large-signal model. Instead of a complex nonlinear trap description, only four constant parameters of the proposed trap model need to be determined to accurately describe the significant impacts of the trapping effects, e.g., drain-source current slump, typical kink observed in pulsed I/V characteristics, and degradation of the output power. Moreover, the extraction procedure of the trap model parameters is based on pulsed S-parameter measurements, which allow to freeze traps and isolate the trapping effects from self-heating. The model validity is tested through small- and large-signal model verification procedures. Particularly, it is shown that the use of this trap model enables to dramatically improve the large-signal simulation results.