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GaN HEMT Modeling Including Trapping Effects Based on Chalmers Model and Pulsed S-Parameter Measurements

Peng Luo

Contributed to the following publications

GaN HEMT Modeling Including Trapping Effects Based on Chalmers Model and Pulsed S-Parameter Measurements
GaN HEMT Modeling Including Trapping Effects Based on Chalmers Model and Pulsed S-Parameter Measurements (Volume 46)
Peng Luo
Author
ISBN-13 (Hard Copy): 978-3-73699-906-0
ISBN-13 (eBook): 978-3-73698-906-1
Price_print
EUR 48.00
Price_ebook
EUR 33.60
2019-01-09

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