Wachstumsmoden und Phasenbildung während der Molekularstrahlepitaxie von Gold auf Silizium (English shop)

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This dissertation by Yue-Lin Huang investigates growth modes and phase formation during the molecular beam epitaxy of gold on silicon. The research focuses on the physical processes involved in depositing thin gold films onto silicon substrates.

The study examines both the deposition of pure gold and the simultaneous deposition of gold and silicon. Particular attention is given to the influence of growth parameters, including substrate temperature, deposition rate, film thickness, and the composition of the molecular beams.

Structural characterization is performed using reflection high-energy electron diffraction (RHEED), transmission electron microscopy (TEM), and high-resolution electron microscopy (HREM). The experimental results demonstrate that pure gold deposition initially produces pseudomorphic layer growth, followed by the formation of a non-crystalline phase. During the simultaneous deposition of gold and silicon, this non-crystalline phase emerges directly at the beginning of the growth process.

The dissertation further explores transitions between different growth modes and the formation of crystalline and non-crystalline structures. The findings provide insights into metal-semiconductor interactions and contribute to a deeper understanding of epitaxial thin-film growth and phase formation in gold-silicon systems.