Optimiertes Design von Mikrowellen-Leistungstransistoren und Verstärkern im X-Band (Volume 11) (English shop)

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This work describes the development of a novel transistor periphery for microwave power transistors and the design of monolithic gallium arsenide (GaAs) and gallium nitride (GaN) power amplifiers in the X band (8-12 GHz).

The novel periphery of the power transistors leads to a more uniform drive of the individual transistor cells. This results in higher gain and efficiency as well as better linearity, particularly in the frequency range above 10 GHz. This improvement of the transistor properties can be exploited in linear amplifiers and in switching amplifiers, using either coplanar or microstrip technology.

The power amplifiers presented here achieve an output power of up to 16 W in the X band with a chip area of only 2.2 mm x 3.3 mm, which represents an international record in terms of power per chip area.

Such amplifiers allow a more compact design and lower weight for many microwave systems, such as space-based communication facilities. Likewise, these amplifiers make new system concepts, such as active phased arrays for airborne RADAR installations, easier or feasible for the first time.