Dreidimensionale Licht emittierende GaInN/GaN-Strukturen mit reduziertem piezoelektrischen Feld (English shop)

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Group III nitrides have the potential to revolutionise, among other things, general lighting technologies and display applications. Efficient light emitters in the near-UV and blue spectral range are already commercially available today. However, the efficiency of such devices decreases continuously as the wavelength increases.

This work first discusses in detail the causes of this decrease in efficiency with regard to growth conditions and induced electric fields. In order to increase the light output, the focus then turns to novel LED types whose active region was deposited on three-dimensional Ga(In)N structures with less polar crystal surfaces. It is shown that this method is suitable for realising high-quality semipolar GaN-based devices on conventional substrate sizes.