"Ultra-Kurzkanal Tunnel-Feldeffekt-Transistoren auf Silizium- und SOI-Substraten (English shop)

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The continuous performance increase of integrated circuits, which is largely based on the miniaturization (scaling) of MOSFETs, will reach its physical limits in the coming years. The tunnel field-effect transistor (TFET) is a novel device that could replace the MOSFET. Its basic principle is based on the control of quantum-mechanical interband tunneling. This work describes the fabrication and characterization of TFETs with ultra-short channel lengths. For the fabrication of the TFETs, the so-called spacer gate technology was developed; this is a planar, self-aligned process. The evaluation of the TFET as a successor to the MOSFET has thus been complemented by an important element. Possible fields of application for tunnel field-effect transistors lie in the low-power domain, such as memory chips or mobile devices.