Methoden zur Defektreduktion von Galliumnitrid-Substraten und -Quasisubstraten (English shop)

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Gallium nitride is already a material of great importance today for optical data storage (Blu-ray Disc, HD-DVD) and general lighting. White-emitting light-emitting diodes (LEDs) are expected to replace incandescent bulbs and fluorescent tubes in the near future, as they are considerably more energy-efficient, longer-lasting and more robust. Semiconductor crystals of particularly high quality are required for these applications.

This work therefore deals with two methods for producing gallium nitride with a low dislocation density and high crystal perfection, as is necessary for the further development of devices. On the one hand, starting from a fundamental investigation of the process parameters, MOVPE growth on patterned substrates is discussed and developed further into a multi-step facet-controlled process. On the other hand, the fabrication of bulk GaN crystals by means of hydride vapour phase epitaxy (HVPE) is described, the most promising method for the industrial production of this material.

Keywords:

gallium nitride, GaN, dislocations, dislocation density, ELO, FACELO, MOVPE, HVPE, hydride vapour phase epitaxy