Hochortsaufgelöste spektroskopische Untersuchungen an Galliumnitrid (English shop)

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This dissertation spans the range from the fundamentals of the spectroscopy of gallium nitride (GaN) through to the resolution of individual crystal dislocations, and thus addresses all those who wish to gain deeper insight into the materials science and spectroscopic fundamentals of this material, which is becoming increasingly important for optoelectronics. The core area of the work is the microphotoluminescence analysis of GaN by means of a confocal microscope. In free-standing GaN layers of low dislocation density, individual crystal dislocations can be detected and investigated spectroscopically. By means of the strain they induce, it is possible to draw conclusions about the type of dislocation itself (Burgers vector of edge dislocations), which previously was only possible with elaborate measurement methods such as transmission electron microscopy. As elasticity theory calculations in agreement with the measurement results show, the strain fields also allow interactions between dislocations, which can lead to ordering effects over distances of several micrometres. “Hochortsaufgelöste Spektroskopie an Galliumnitrid” also comprises an extensive description of the material system GaN and its spectroscopic properties, a brief introduction to elasticity theory, and detailed descriptions of and tips on confocal spectroscopy of GaN, thus offering newcomers to the field a good introductory text with extensive references to the literature.