Wachstum und optische Charakterisierung von Nanodraht–basierten Lichtemittern und photovoltaischen Bauelementen (English shop)

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This dissertation establishes the growth-related prerequisites for the development of GaAs nanowire-based light emitters and solar cells, and realises nanowire devices with optoelectronic and photovoltaic functionality.

The doping of nanowires in the vapour–liquid–solid growth mode (VLS for short), which is employed in this work, represents a major challenge on the path towards the realisation of optoelectronic nanowire-based devices. In the present work, both p- and n-doping of GaAs nanowires in the VLS mode were successfully realised by means of metalorganic vapour phase epitaxy.

On the basis of successful p- and n-doping, this dissertation develops GaAs nanowire p–n junctions in axial and radial growth directions. The nanowire diodes thus realised demonstrate strong electroluminescence in the near infrared. In addition, they exhibit pronounced photovoltaic functionality. Under standard illumination, the axial and radial nanowire p–n diodes show an effective photovoltaic efficiency of 9 % and 4.7 %, respectively, which enables their application in photosensing and photovoltaics.